? semiconductor components industries, llc, 2004 august, 2004 ? rev. 6 1 publication order number: mcr703a/d mcr703a series preferred device sensitive gate silicon controlled rectifiers reverse blocking thyristors pnpn devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. features ? pb?free package is available ? small size ? passivated die surface for reliability and uniformity ? low level triggering and holding characteristics ? recommend electrical replacement for c106 ? surface mount package ? case 369c ? to obtain adpako in straight lead version (shipped in sleeves): ? add '1' suffix to device number, i.e., MCR706A1 ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v scrs 4.0 amperes rms 100 ? 600 volts k g a pin assignment 1 2 3 anode cathode gate 4 anode preferred devices are recommended choices for future use and best overall value. dpak case 369c style 2 marking diagrams y = year ww = work week x = 3, 6, or 8 1 2 3 4 yww cr 70xa dpak?3 case 369d style 2 1 2 3 4 yww cr 70xa see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information http://onsemi.com
mcr703a series http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol max unit peak repetitive off?state voltage (note 1) (t c = ?40 to +110 c, sine wave, 50 to 60 hz, gate open) mcr703a MCR706A mcr708a v drm, v rrm 100 400 600 v peak non-repetitive off?state voltage (sine wave, 50 to 60 hz, gate open, t c = ?40 to +110 c) mcr703a MCR706A mcr708a v rsm 150 450 650 v on?state rms current (180 conduction angles; t c = 90 c) i t(rms) 4.0 a average on?state current (180 conduction angles) t c = ?40 to +90 c t c = +100 c i t(av) 2.6 1.6 a non-repetitive surge current (1/2 sine wave, 60 hz, t j = 110 c) (1/2 sine wave, 1.5 ms, t j = 110 c) i tsm 25 35 a circuit fusing (t = 8.3 msec) i 2 t 2.6 a 2 sec forward peak gate power (pulse width 1.0 sec, t c = 90 c) p gm 0.5 w forward average gate power (t = 8.3 msec, t c = 90 c) p g(av) 0.1 w forward peak gate current (pulse width 1.0 sec, t c = 90 c) i gm 0.2 a operating junction temperature range t j ?40 to +110 c storage temperature range t stg ?40 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a cons tant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 8.33 c/w thermal resistance, junction?to?ambient (note 2) r ja 80 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c 2. case 369c when surface mounted on minimum pad sizes recommended.
mcr703a series http://onsemi.com 3 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v ak = rated v drm or v rrm ; r gk = 1 k )t c = 25 c t c = 110 c i drm , i rrm ? ? ? ? 10 200 a on characteristics peak forward aono voltage (i tm = 8.2 a peak, pulse width = 1 to 2 ms, 2% duty cycle) v tm ? ? 2.2 v gate tri gger current (continuous dc) (note 3) (v ak = 12 vdc, r l = 24 ohms) t c = 25 c t c = ?40 c i gt ? ? 25 ? 75 300 a gate tri gger v oltage (continuous dc) (note 3) t c = 25 c (v ak = 12 vdc, r l = 24 ohms) t c = ?40 c v gt ? ? ? ? 0.8 1.0 v gate non-tri gger v oltage (note 3) (v ak = 12 vdc, r l = 100 ohms, t c = 110 c) v gd 0.2 e e v holding current (v ak = 12 vdc, gate open) t c = 25 c (initiating current = 200 ma) t c = ?40 c i h ? ? ? ? 5.0 10 ma peak reverse gate blocking voltage (i gr = 10 a) v rgm 10 12.5 18 v peak reverse gate blocking current (v gr = 10 v) i rgm ? ? 1.2 a total turn-on time (source voltage = 12 v, r s = 6 k ) (i tm = 8.2 a, i gt = 2 ma, rated v drm ) (rise time = 20 ns, pulse width = 10 s) t gt ? 2.0 ? s dynamic characteristics critical rate of rise of off?state voltage (v d = rated v drm , r gk = 1 k , exponential waveform, t c = 110 c) dv/dt ? 10 ? v/ s repetitive critical rate of rise of on?state current (cf = 60 hz, i pk = 30 a, pw = 100 s, dig/dt = 1 a/ s) di/dt ? ? 100 a/ s 3. r gk current not included in measurement. ordering information device package type package shipping 2 mcr703at4 dpak 369c 2500 tape & reel MCR706At4 dpak 369c 2500 tape & reel MCR706At4g dpak (pb?free) 369c 2500 tape & reel mcr708a dpak 369c 2500 tape & reel mcr708a1 dpak?3 369d 75 units / rail mcr708at4 dpak 369c 2500 tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mcr703a series http://onsemi.com 4 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off?state forward voltage i drm peak forward blocking current v rrm peak repetitive off?state reverse voltage i rrm peak reverse blocking current v tm peak on?state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode ? forward blocking region i rrm at v rrm (off state) 30 c 60 c 90 c figure 1. average current derating figure 2. on?state power dissipation figure 3. on?state characteristics figure 4. transient thermal response 5.0 0 i t(av) , average on-state current (amps) 110 105 i t(av) , average on-state current (amps) 5.0 0 1.0 0 3.0 4.0 0.5 v t , instantaneous on-state voltage (volts) 100 10 1.0 0.1 t, time (ms) 1.0 0.1 1.0 0.1 0.01 3.5 t c , maximum allowable case temperature ( c) p i r (t) , transient resistance (normalized) 100 95 3.0 1.0 2.0 4.0 4.0 1.0 2.0 3.0 2.0 3.0 4.0 1.0 1.5 2.0 2.5 10 100 1000 10,000 5.0 , average power dissipation (watts) (av) t , instantaneous on-state current (amps) 4.5 z jc(t) = r jc(t) ? r(t) 120 c 180 c dc 30 c 60 c 90 c 120 c 180 c dc maximum @ t j = 110 c maximum @ t j = 25 c typical @ t j = 25 c
mcr703a series http://onsemi.com 5 110 -40 t j , junction temperature ( c) 2.0 1.5 i h , holding current (ma) i 0.5 0 20 -20 0 40 , latching current (ma) l 1.0 60 80 100 110 -40 t j , junction temperature ( c) 2.0 1.5 0.5 0 20 -20 0 40 1.0 60 80 100 t j , junction temperature ( c) 1.0 0 0.5 v gt , gate trigger voltage (volts) -20 40 -40 0 20 100 60 80 110 figure 5. typical gate trigger current versus junction temperature -20 40 -40 t j , junction temperature ( c) 35 30 25 20 15 0 , gate trigger current ( a) i gt 20 100 60 80 110 figure 6. typical gate trigger voltage versus junction temperature figure 7. typical holding current versus junction temperature figure 8. typical latching current versus junction temperature
mcr703a series http://onsemi.com 6 package dimensions dpak case 369c issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? seating plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 2: pin 1. gate 2. drain 3. source 4. drain
mcr703a series http://onsemi.com 7 package dimensions dpak?3 case 369d?01 issue b 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? style 2: pin 1. gate 2. drain 3. source 4. drain
mcr703a series http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mcr703a/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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